onsemi MOSFET-Gate-Ansteuerung 6 A, 6 A. 22V 24-Pin QFN 15ns

Ausgangsstrom = 6 A, 6 A.
Versorgungsspannung = 22V
Pinanzahl = 24
Gehäusegröße = QFNns
Anzahl der Ausgänge = 1
Anstiegszeit = 15ns
Topologie = Halbbrücke
Ein-/Ausgangsabhängigkeit = Independent
Zeitverzögerung = 50ns
Brücken-Typ = Vollbrücke, Halbbrücke
Polarität = Inverting, Non-Inverting
Montage-Typ = SMD

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.Allow independent Turn-ON/Turn-OFF Adjustment Efficient SiC MOSFET Operation during the Conduction Period Fast Turn-off and Robust dV/dt Immunity Minimize complexity of bias supply in isolated gate drive applications Sufficient VGS amplitude to match SiC best performance Self protection of the design